Density functional study of the TiN/Ge2Sb2Te5 interface

Physica Status Solidi (B) Basic Research

Volumn 249, Issue 11, 2012, Pages 2140-2144

  Mandelli, D ^a,c   Caravati, S ^b   Bernasconi, M ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b UNIVERSITY OF LUGANO   (Switzerland)

^c SISSA   (Italy)

Author keywords

Density functional theory; Electronic structure calculations; Metal semiconductor interfaces; Phase change materials; TiN

Indexed keywords

ADHESION; DATA STORAGE EQUIPMENT; ELECTRONIC STRUCTURE; PHASE CHANGE MATERIALS; SEMICONDUCTING GERMANIUM; TIN; TITANIUM NITRIDE;

DENSITY-FUNCTIONAL STUDY; ELECTRONIC STRUCTURE CALCULATIONS; EQUILIBRIUM DISTANCES; GEOMETRY OPTIMIZATION; INTERFACE FORMATION; METAL SEMICONDUCTOR INTERFACE; METAL-INDUCED GAP STATE; NON-VOLATILE MEMORY;

DENSITY FUNCTIONAL THEORY;

EID: 84868681144     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201248290     Document Type: Article

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