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Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 827-830

Comparison Between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results

(7) La Via, F a Roccaforte, F a Di Franco, S a Raineri, V a Moscatelli, F b Scorzoni, A b Cardinali, G C b

a CNR IMM (Italy)

b CNR (Italy)

Author keywords

Edge Termination; Schottky Diodes; Simulations

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; SCHOTTKY BARRIER DIODES; THERMAL CONDUCTIVITY;

EDGE TERMINATION;

SILICON CARBIDE;

EID: 0242580975 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.433-436.827 Document Type: Conference Paper

Times cited : (13)

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- F. Roccaforte, F. La Via, V. Raineri, P. Musumeci, L. Calcagno, G.G. Condorelli, Appl. Phys. A submitted.
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