Doping concentration optimization for ultra-low-loss 4H-SiC floating junction Schottky barrier diode (Super-SBD)

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 655-658

  Ota, C ^a   Nishio, J ^a   Takao, K ^a   Hatakeyama, T ^a   Shinohe, T ^a   Kojima, K ^b   Nishizawa, S ^b   Ohashi, H ^b  

^a TOSHIBA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

BFOM(Baliga's figure of merit) forward recovery; Diode; Doping concentration; Floating layer; Reverse recovery; Super SBD

Indexed keywords

DIODES; SILICON CARBIDE;

DOPING CONCENTRATION; FLOATING LAYER; FORWARD RECOVERIES; REVERSE RECOVERY; SUPER-SBD;

SCHOTTKY BARRIER DIODES;

EID: 79251564425     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.655     Document Type: Conference Paper

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