SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 522, Issue , 2012, Pages 468-472

Relaxation in bi-stable resistive states of chemical vapor deposition grown graphene

(4) Turpu, G R a,b Iqbal, M W a Iqbal, M Z a Eom, Jonghwa a

a Sejong University (South Korea)

b GURU GHASIDAS UNIVERSITY (India)

Author keywords

Bi stable switching effect; Graphene; Hysteresis; Relaxation

Indexed keywords

BACK GATES; BACKGATE VOLTAGE; BISTABLES; CHARGE POLARITY; CURRENT VOLTAGE; ELECTRICAL RESISTANCES; GRAPHENE DEVICES; LENGTH SCALE; RELAXATION; RESISTANCE SWITCHING; RESISTIVE STATE; RESISTIVE SWITCHING; SOURCE AND DRAINS; SWEEPING RATE; SWITCHING EFFECT; TEMPORAL PROFILE;

DRAIN CURRENT; GRAPHENE; HYSTERESIS; SWITCHING SYSTEMS; VAPORS;

CHEMICAL VAPOR DEPOSITION;

EID: 84868543037 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.08.030 Document Type: Conference Paper

Times cited : (8)

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