Charging effect simulation model used in simulations of plasma etching of silicon

Journal of Applied Physics

Volumn 112, Issue 8, 2012, Pages

  Ishchuk, Valentyn ^a   Volland, Burkhard E ^a   Hauguth, Maik ^a   Cooke, Mike ^b   Rangelow, Ivo W ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGING EFFECT; CRITICAL CHALLENGES; ETCH PROCESS; ETCHING PROCESS; ETCHING PROFILE; EXPERIMENTAL VALIDATIONS; FULLY INTEGRATED; HIGH DENSITY PLASMA ETCHING; LOCAL SURFACES; MICRO-TRENCHING; NOTCHING EFFECTS; PLASMA ETCH; POSITIVELY CHARGED IONS; PROCESSING SIMULATION; SIMULATION MODEL; SURFACE CHARGING; TIME MULTIPLEXED; UNIVERSITY OF TECHNOLOGY;

COMPUTER SOFTWARE; ELECTRIC FIELDS; PLASMA ETCHING; SURFACE CHARGE;

COMPUTER SIMULATION;

EID: 84868383852     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4759005     Document Type: Article

References (18)

1. I. W. Rangelow, J. Vac. Sci. Technol. A 21, 1550, (2003). 10.1116/1.1580488
2. I. W. Rangelow, Vacuum 62, 279 (2001). 10.1016/S0042-207X(00)00442-5
3. J. C. Arnold and H. H. Sawin, J. Appl. Phys. 70, 5314 (1991). 10.1063/1.350241
4. H. Ootera, T. Oomori, M. Tuda, and K. Namba, Jpn. J. Appl. Phys., Part 1 33, 4276 (1994). 10.1143/JJAP.33.4276
5. T. Kinoshita, M. Hane, and J. P. McVittie, J. Vac. Sci. Technol. B 14, 560 (1996). 10.1116/1.588431
6. G. S. Hwang and K. P. Giapis, J. Vac. Sci. Technol. B 15, 70 (1997). 10.1116/1.589258
7. M. A. Vyvoda, M. Li, and D. B. Graves, J. Vac. Sci. Technol. A 17, 3293 (1999). 10.1116/1.582056
8. J. Matsui, N. Nakano, Z. L. Petrović, and T. Makabe, Appl. Phys. Lett. 78, 883 (2001). 10.1063/1.1347021
9. M. Hauguth, B. E. Volland, V. Ishchuk, D. Dressler, T. Danz, I. W. Rangelow, G. Kokkoris, E. Gogolides, A. Goodyear, and M. Cooke, Microelectron. Eng. 86, 976 (2009). 10.1016/j.mee.2009.02.012
10. G. Kokkoris, A. Panagiotopoulos, A. Goodyear, M. Cooke, and E. Gogolides, J. Phys. D: Appl. Phys. 42, 055209 (2009). 10.1088/0022-3727/42/5/055209
11. A. Fichelscher, I. W. Rangelow, and A. Stamm, Proc. SPIE 1392, 77-83 (1990).
12. M. A. Lieberman, IEEE Trans. Plasma Sci. 16, 638-644 (1988). 10.1109/27.16552
13. V. A. Godyak and N. Sternberg, Phys. Rev. A 42, 2299 (1990). 10.1103/PhysRevA.42.2299
14. E. Kawamura, V. Vahedi, M. A. Lieberman, and C. K. Birdsall, Plasma Sources Sci. Technol. 8, R45 (1999). 10.1088/0963-0252/8/3/202
15. T. Panagopoulos and D. J. Economou, J. Appl. Phys. 85, 3435 (1999). 10.1063/1.369701
16. M. Hauguth, T. Danz, B. E. Volland, V. Ishchuk, D. Dressler, and I. W. Rangelow, Microelectron. Eng. 85, 982 (2008). 10.1016/j.mee.2008.01.019
17. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing, 2nd ed. (Wiley, Hoboken, New Jersey, 2005), p. 07030.
18. J. Shewchuk, Triangle: Engineering a 2D Quality Mesh Generator and Delaunay Triangulator, Applied Computational Geometry Towards Geometric Engineering, Lecture Notes in Computer Science, Vol. 1148, edited by, M. Lin, and, D. Manocha, (Springer, Berlin/Heidelberg, 1996), pp. 203-222.