Measurement of electric-field induced second harmonic generation in hydrogenated amorphous silicon

Applied Physics Letters

Volumn 101, Issue 16, 2012, Pages

  He, Long ^a   Walker, James D ^a,c   Branz, Howard M ^b   Rogers, Charles T ^a   Teplin, Charles W ^b  

^a UNIVERSITY OF COLORADO   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c Ferro Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; APPLIED BIAS; APPLIED VOLTAGES; BUILT-IN VOLTAGE; HYDROGENATED AMORPHOUS SILICON (A-SI:H); INDIUM TIN OXIDE; OPTICAL PENETRATION DEPTH; OPTICAL SECOND-HARMONIC GENERATION; PROBE LASER; SEPARATE INTERFACES; SHG SIGNALS; SQUARE ROOTS;

AMORPHOUS SILICON; BIAS VOLTAGE; DIODES; ELECTRIC FIELDS; HYDROGENATION; NONLINEAR OPTICS; PROBES; TIN; TIN OXIDES;

SILICON;

EID: 84867813315     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4761477     Document Type: Article

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