Characterization of H-plasma treated ZnO crystals by positron annihilation and atomic force microscopy

Defect and Diffusion Forum

Volumn 331, Issue , 2012, Pages 113-125

  Cicek J ^a   Prochazka I ^a   Kuriplach, J ^b   Anwand, W ^b   Brauer, G ^b   Cowan, T E ^b   Grambole, D ^b   Schmidt, H ^b   Skorupa, W ^b  

^a CHARLES UNIVERSITY   (Czech Republic)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Atomic force microscopy; Hydrogen; Positron annihilation; Zinc oxide

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; DEPTH PROFILING; ELECTRONS; HYDROGEN; II-VI SEMICONDUCTORS; PLASMA APPLICATIONS; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; SINGLE CRYSTALS; ZINC OXIDE;

ANNIHILATION PHOTONS; COINCIDENCE DOPPLER BROADENING; COMPLEMENTARY TECHNIQUES; DEFECT CHARACTERIZATION; DEFECT IDENTIFICATION; PHYSICAL MECHANISM; POSITRON LIFETIME SPECTROSCOPY; ZNO SINGLE CRYSTALS;

POSITRONS;

EID: 84867558468     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/DDF.331.113     Document Type: Article

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