Structural characterization of H plasma-doped ZnO single crystals by Hall measurements and photoluminescence studies

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 11, 2010, Pages 2426-2431

  Anwand, Wolfgang ^a   Brauer, Gerhard ^a   Cowan, Thomas E ^a   Heera, Viton ^a   Schmidt, Heidemarie ^a   Skorupa, Wolfgang ^a   Von Wenckstern, Holger ^b   Brandt, Matthias ^b   Benndorf, Gabriele ^b   Grundmann, Marius ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

doping; mobility; photoluminescence; surface conductivity; ZnO

Indexed keywords

AS-GROWN; BAND-EDGE EMISSIONS; BEFORE AND AFTER; DENSITY RATIO; DOPED ZNO; DOPING; DOPING DENSITIES; ELECTRICAL PROPERTY; H-CONTENT; HALL MEASUREMENTS; HYDROTHERMALLY; LOW TEMPERATURE PHOTOLUMINESCENCE; MOBILITY; NEAR SURFACE REGIONS; NEAR-SURFACE LAYERS; NUCLEAR REACTION ANALYSIS; PL MEASUREMENTS; PLASMA TREATMENT; SHALLOW DONORS; STRUCTURAL CHARACTERIZATION; SURFACE CONDUCTIVITY; TEMPERATURE DEPENDENT; ZNO; ZNO SINGLE CRYSTALS;

CHARACTERIZATION; DIELECTRIC PROPERTIES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GALLIUM; HALL EFFECT; MAGNETIC FIELD EFFECTS; NUCLEAR REACTORS; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; ZINC; ZINC OXIDE;

SINGLE CRYSTALS;

EID: 78349263839     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026311     Document Type: Article

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