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Volumn 101, Issue 14, 2012, Pages

Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer

(11) Desplanque, L a El Kazzi, S a Coinon, C a Ziegler, S b Kunert, B b Beyer, A c Volz, K c Stolz, W c Wang, Y d Ruterana, P d Wallart, X a

a UNIV LILLE (France)

b NAsPIII/V GmbH (Germany)

c PHILIPPS UNIVERSITY MARBURG (Germany)

d Direction de la Recherche Fondamentale (France)

Author keywords

[No Author keywords available]

Indexed keywords

GAP SUBSTRATES; GROWTH CONDITIONS; HIGH ELECTRON MOBILITY; INTERFACIAL LAYER; METAL-ORGANIC VAPOR PHASE EPITAXY; MONOLITHIC INTEGRATION; SI SUBSTRATES;

ELECTRON MOBILITY; EPITAXIAL GROWTH; INDIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; OPTIMIZATION; SUBSTRATES;

GALLIUM ALLOYS;

EID: 84867526073 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4758292 Document Type: Article

Times cited : (28)

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