GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure

Journal of Applied Physics

Volumn 111, Issue 8, 2012, Pages

  Beyer, A ^a   Ohlmann, J ^a   Liebich, S ^a   Heim, H ^a   Witte, G ^a   Stolz, W ^a   Volz, K ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPHASE DOMAINS; ATOMIC CONFIGURATION; CRUCIAL PARAMETERS; DEFECT-FREE; DEVICE INTEGRATION; DOUBLE-STEP; GROWTH CONDITIONS; INTERFACE STRUCTURES; NUCLEATION LAYERS; SI(0 0 1);

EPITAXIAL GROWTH; OPTOELECTRONIC DEVICES; SILICON;

GALLIUM ALLOYS;

EID: 84860523540     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4706573     Document Type: Article

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