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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 2, 2012, Pages 310-313

Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing

(4) Ker, Pin Jern a Marshall, Andrew R J b David, John P R a Tan, Chee Hing a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

b LANCASTER UNIVERSITY (United Kingdom)

Author keywords

Avalanche photodiodes; Detectivity; Impact ionization; InAs; Responsivity

Indexed keywords

AVALANCHE MULTIPLICATION FACTOR; DARK CURRENT MEASUREMENTS; DETECTIVITY; ELECTRON AVALANCHE PHOTODIODE; EXCESS NOISE FACTOR; GENERATION-RECOMBINATION; INAS; INFRARED SENSING; LOW NOISE; RESPONSIVITY; SURFACE COMPONENTS; SURFACE CURRENT;

ACTIVATION ENERGY; AVALANCHE PHOTODIODES; CURRENT DENSITY; DARK CURRENTS; IMPACT IONIZATION;

INDIUM ARSENIDE;

EID: 84856144010 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201100277 Document Type: Article

Times cited : (23)

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