Effect of phase transition on the optoelectronic properties of Zn 1-xMg xS

Journal of Applied Physics

Volumn 112, Issue 7, 2012, Pages

  Khan, Imad ^a   Ahmad, Iftikhar ^a   Rahnamaye Aliabad, H A ^b   Maqbool, M ^c  

^a UNIVERSITY OF MALAKAND   (Pakistan)

^b HAKIM SABZEVARI UNIVERSITY   (Iran)

^c BALL STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

D ORBITALS; DFT CALCULATION; DIELECTRIC FUNCTIONS; DIRECT BAND GAP; ENERGY LOSS FUNCTION; EXCHANGE AND CORRELATION; EXTERNAL ENVIRONMENTS; MG CONCENTRATIONS; OPTOELECTRONIC PROPERTIES; ROCK SALT; ROCK-SALT PHASE; STRUCTURAL PHASE TRANSITION; THICKNESS OF THE FILM; ZINC-BLENDE;

CRYSTAL STRUCTURE; DENSITY FUNCTIONAL THEORY; ENERGY DISSIPATION; ENERGY GAP; MAGNESIUM; OPTOELECTRONIC DEVICES; REFRACTIVE INDEX;

ZINC;

EID: 84867509146     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4756040     Document Type: Article

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