Transition from optically inactive to active Mg-chalcogenides: A first principle study

Computational Materials Science

Volumn 61, Issue , 2012, Pages 278-282

  Khan, Imad ^a   Afaq, A ^b   Rahnamaye Aliabad, H A ^c   Ahmad, Iftikhar ^a  

^a UNIVERSITY OF MALAKAND   (Pakistan)

^b UNIVERSITY OF THE PUNJAB   (Pakistan)

^c HAKIM SABZEVARI UNIVERSITY   (Iran)

Author keywords

Band gap engineering; Chalcogenides; Optoelectronics; Semiconductors

Indexed keywords

BAND GAP ENGINEERING; COMPOSITION RANGES; DIRECT BAND GAP; FIRST-PRINCIPLE STUDY; FULL POTENTIAL-LINEARIZED AUGMENTED PLANE WAVES; INDIRECT BAND GAP; LUMINESCENT MATERIAL;

CHALCOGENIDES; DENSITY FUNCTIONAL THEORY; MAGNESIUM; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SEMICONDUCTOR MATERIALS;

ENERGY GAP;

EID: 84861169083     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2012.04.036     Document Type: Article

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