MBE-grown ZnMgS ultra-violet photodetectors

Journal of Electronic Materials

Volumn 30, Issue 6, 2001, Pages 673-676

  Sou, I K ^a   Wu, M C W ^a   Sun, T ^a   Wong, K S ^a   Wong, G K L ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

MBE; Photodetectors; Ultra violet; ZnMgS

Indexed keywords

COMPOSITION EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCHOTTKY BARRIER DIODES; THICKNESS MEASUREMENT; ZINC ALLOYS;

PHOTOCURRENT DECAYS; ULTRAVIOLET PHOTODETECTORS; ZINC MAGNESIUM SULFIDE;

ULTRAVIOLET DETECTORS;

EID: 0035360008     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02665854     Document Type: Article

References (11)

1. A. Osinsky, S. Gangopadhyay, B.W. Lim, M.Z. Anwar, M.A. Khan,D. Kuksenkov, and H. Tempkin, Appl. Phys. Lett. 72, 742 (1998)
2. E. Monroy, F. Calle, E. Munoz, F. Omnes, B. Beaumont, P. Gibart, J.A. Munoz, and F. Cusso, MRS Internet J. Nitride Semicond. Res. 3, art. 9 (1998).
3. D. Walker and M. Razeghi, Elektronik. 8, 25 (2000)
4. I.K. Sou, C.L. Man, Z.H. Ma, Z. Yang, and G.K.L. Wong, Appl. Phys. Lett. 71, 3847 (1997).
5. Z.H. Ma, I.K. Sou, K.S. Wong, Z. Yang, and G.K.L. Wong, Appl Phys. Lett. 73, 2251 (1998).
6. I.K. Sou, Z.H. Ma, and G.K.L. Wong, Appl. Phys. Lett. 75, 3707 (1999).
7. G. Kalpana, B. Palanivel, R.M. Thomas, and M. Rajagopalan, Physica B 222, 223 (1996).
8. H. Okuyama, Y. Kishita, and A. Ishibashi, Phys. Rev. B 57, 2257 (1998).
9. G.C. Xing, K.J. Bachmann, J.B. Posthill, and M.L. Timmons,J. Cryst. Growth 113, 113 (1991).
10. K. Ichino, S. Akiyoshi, T. Kawakami, H. Misasa, M. Kitagawa, and H. Kobayashi, Jpn. J. Appl. Phys. 36, L1283 (1997)
11. H. Melchior, Laser Handbook, Vol. 1, ed. F.T. Arecchi and E.O. Schulz-Dubois (Amsterdam: North-Holland, 1972), pp. 725–835