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Volumn 113, Issue 9, 2013, Pages 1285-1292

Theoretical studies of the band structure and optoelectronic properties of ZnOxS1-x

Author keywords

band gap bowing; band gap engineering; dielectrics; mBJ; optoelectronics

Indexed keywords

BAND GAP BOWING PARAMETER; BAND GAP ENGINEERING; BAND-GAP BOWINGS; DIELECTRIC FUNCTIONS; ELECTRONIC BAND GAPS; MBJ; OPTOELECTRONIC PROPERTIES; PARTIAL DENSITY OF STATE;

EID: 84875382186     PISSN: 00207608     EISSN: 1097461X     Source Type: Journal    
DOI: 10.1002/qua.24277     Document Type: Article
Times cited : (27)

References (45)
  • 42


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.