Control of composition and growth rate of ZnMgS grown on GaP by molecular beam epitaxy using excess sulfur beam pressure

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 10 PART A, 1997, Pages

  Ichino, Kunio ^a   Akiyoshi, Shin Ichiro ^a   Kawakami, Tsukasa ^a   Misasa, Hiroaki ^a   Kitagawa, Masahiko ^a   Kobayashi, Hiroshi ^a  

^a TOTTORI UNIVERSITY   (Japan)

Author keywords

Band gap; Composition control; Excess sulfur beam pressure; GaP substrate; Molecular beam epitaxy; ZnMgS; ZnS based alloy

Indexed keywords

CRYSTAL LATTICES; ENERGY GAP; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; SUBSTRATES; TERNARY SYSTEMS; ZINC ALLOYS; ZINC SULFIDE;

EXCESS SULFUR BEAM PRESSURE; GALLIUM PHOSPHIDE; LATTICE MATCHING; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0031248885     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1283     Document Type: Article

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