Strain controlled systematic variation of metal-insulator transition in epitaxial NdNiO 3 thin films

Journal of Applied Physics

Volumn 112, Issue 7, 2012, Pages

  Kumar, Yogesh ^a   Choudhary, R J ^b   Kumar, Ravi ^a,c  

^a INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^b UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

^c NATIONAL INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITED FILMS; ELECTRICAL TRANSPORT PROPERTIES; FLUENCES; IN-PLANE COMPRESSION; IN-PLANE COMPRESSIVE STRAIN; PULSED-LASER DEPOSITION TECHNIQUE; SRTIO; STRAIN-DEPENDENT; SYSTEMATIC VARIATION; X-RAY DIFFRACTION STUDIES;

DEPOSITS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; IRRADIATION; PULSED LASER DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTOR INSULATOR BOUNDARIES; SILVER; TRANSPORT PROPERTIES; X RAY DIFFRACTION;

THIN FILMS;

EID: 84867495044     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4758306     Document Type: Article

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