Evidence of quantum correction to conductivity in strained epitaxial LaNiO3 films

Journal of Applied Physics

Volumn 108, Issue 8, 2010, Pages

  Kumar, Yogesh ^a   Choudhary, R J ^b   Singh, Abhinav Pratap ^a   Anjum, G ^c   Kumar, Ravi ^a,d  

^a INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^b UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

^c ALIGARH MUSLIM UNIVERSITY   (India)

^d NATIONAL INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITED FILMS; EPITAXIAL THIN FILMS; FLUENCES; HIGH TEMPERATURE; INDUCED STRAIN; LNO FILMS; LOW TEMPERATURE RESISTIVITY; MAGNETO TRANSPORT PROPERTIES; MAGNETOTRANSPORT DATA; METALLIC BEHAVIORS; QUANTUM CORRECTION; RESISTIVITY UPTURN; RF-MAGNETRON SPUTTERING; SEMICONDUCTING BEHAVIOR; SWIFT HEAVY ION IRRADIATION; TEMPERATURE RANGE; VARIABLE RANGE HOPPING; WEAK LOCALIZATION;

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FILM GROWTH; METALLIC FILMS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; X RAY DIFFRACTION;

EPITAXIAL FILMS;

EID: 78149454377     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3494091     Document Type: Article

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