Selective sidewall wetting of polymer blocks in hydrogen silsesquioxane directed self-assembly of PS-b-PDMS

ACS Applied Materials and Interfaces

Volumn 4, Issue 9, 2012, Pages 4637-4642

  Hobbs, Richard G ^a,b   Farrell, Richard A ^a,b   Bolger, Ciara T ^a,b   Kelly, Roisin A ^a,b   Morris, Michael A ^a,b   Petkov, Nikolay ^a,b   Holmes, Justin D ^a,b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

block copolymer; electron beam lithography; hydrogen silsesquioxane; nanolithography; surface functionalization; templated self assembly

Indexed keywords

BRUSH LAYERS; DEEP ULTRAVIOLET LITHOGRAPHY; DEVICE-SCALING; DIRECTED SELF-ASSEMBLY; ETCH RESISTANCE; FUNCTIONALIZATIONS; HEXAMETHYLDISILAZANE; HYDROGEN SILSESQUIOXANE; POLYMER BLOCKS; ROOM TEMPERATURE; SELECTIVE TUNING; SELF-ASSEMBLED; SOLVENT ANNEALING; SUBSTRATE SURFACE; SURFACE FUNCTIONALIZATION; TRIMETHYLSILYL; WETTING LAYER;

BLOCK COPOLYMERS; BRUSHES; MICROCHANNELS; MONOLAYERS; NANOLITHOGRAPHY; POLYSTYRENES; SELF ASSEMBLY; SILICONES; WETTING;

ELECTRON BEAM LITHOGRAPHY;

EID: 84867454221     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am301012p     Document Type: Article

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