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A 19 W high-efficiency wideband CMOS-GaN class-E Chireix RF outphasing power amplifier
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Effect of maximum power supply voltage on envelope tracking power amplifiers using GaN HEMTs
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3.54 GHz 10 W envelope tracking amplifier with 43% efficiency utilizing the 1.5 bit-high efficiency envelope amplifier
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GaN envelope tracking power amplifier with more than one octave carrier bandwidth
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J. J. Yan, C. Hsia, D. F. Kimball, and P. M. Asbeck,"GaN envelope tracking power amplifier with more than one octave carrier bandwidth," in Proc. IEEE Compound Semicond. Integr. Circuit Symp., Oct. 16-19, 2011, pp. 1-4.
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Broadband GaN HEMT push-pull microwave power amplifier
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J.-W. Lee and K. J. Webb,"Broadband GaN HEMT push-pull microwave power amplifier," IEEE Microw. Wireless Compon. Lett., vol. 11, no. 9, pp. 367-369, Sep. 2001. (Pubitemid 33076112)
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Modeling and design of RF amplifiers for envelope tracking WCDMA base-station applications
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Wideband high efficiency envelope tracking integrated circuit for micro-base station power amplifiers
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Design of a highly efficient 2-4-GHz octave bandwidth GaN-HEMT power amplifier
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1.6-2.1 GHz broadband Doherty power amplifiers for LTE handset applications
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A wideband GaN doherty amplifier with 35%fractional bandwidth
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