1.6-2.1 GHz broadband Doherty power amplifiers for LTE handset applications

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2011, Pages

  Kang, Daehyun ^a   Kim, Dongsu ^a   Cho, Yunsung ^a   Kim, Jooseung ^a   Park, Byungjoon ^a   Zhao, Chenxi ^a   Kim, Bumman ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Broadband; Doherty; efficiency; hetero junction bipolar transistors (HBT); linearity; long term evolution (LTE); MMIC; power amplifier (PA)

Indexed keywords

BROADBAND; DOHERTY; HETERO-JUNCTION BIPOLAR TRANSISTORS (HBT); LINEARITY; LONG TERM EVOLUTION;

BANDWIDTH; BIPOLAR TRANSISTORS; BROADBAND AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; TELEPHONE SETS; VOLTAGE DIVIDERS;

DOHERTY AMPLIFIERS;

EID: 80052324148     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2011.5972657     Document Type: Conference Paper

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