An extended Doherty amplifier with high efficiency over a wide power range

IEEE Transactions on Microwave Theory and Techniques

Volumn 49, Issue 12, 2001, Pages 2472-2479

  Iwamoto, Masaya ^a,b   Williams, Aracely ^b   Chen, Pin Fan ^a,c,d   Metzger, Andre G ^a,b,e   Larson, Lawrence E ^a,b   Asbeck, Peter M ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Global Communication Semiconductors   (United States)

^d AGILENT TECHNOLOGIES   (United States)

^e Mindspeed Technologies   (United States)

Author keywords

CDMA; Heterojunction bipolar transistors; Power added efficiency; RF power amplifier

Indexed keywords

DOHERTY AMPLIFIERS;

CODE DIVISION MULTIPLE ACCESS; COMMUNICATION CHANNELS (INFORMATION THEORY); ELECTRIC IMPEDANCE; GAIN CONTROL; HETEROJUNCTION BIPOLAR TRANSISTORS; POWER ELECTRONICS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

POWER AMPLIFIERS;

EID: 0035683727     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.971638     Document Type: Conference Paper

References (11)

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