Design of a highly efficient 2-4-GHz octave bandwidth GaN-HEMT power amplifier

IEEE Transactions on Microwave Theory and Techniques

Volumn 58, Issue 7 PART 1, 2010, Pages 1677-1685

  Saad, Paul ^a   Fager, Christian ^a   Cao, Haiying ^a   Zirath, Herbert ^a   Andersson, Kristoffer ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

GaN HEMT; High efficiency; Octave bandwidth; Power amplifier (PA); Wideband matching networks

Indexed keywords

ADJACENT CHANNEL LEAKAGE RATIOS; DRAIN EFFICIENCY; GAN HEMTS; HIGH EFFICIENCY; LARGE-SIGNALS; LOAD IMPEDANCE; LONG-TERM EVOLUTION; OCTAVE BANDWIDTH; OUTPUT POWER; PEAK-TO-AVERAGE RATIO; POWER GAINS; POWER-ADDED EFFICIENCY; WIDE-BAND; WIDEBAND MATCHING;

BANDWIDTH; COMPUTER SIMULATION; DESIGN; GALLIUM ALLOYS; GALLIUM NITRIDE; POWER AMPLIFIERS;

BROADBAND AMPLIFIERS;

EID: 77954659019     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2010.2049770     Document Type: Article

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