A high-efficiency 100-W four-stage Doherty GaN HEMT power amplifier module for WCDMA systems

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2011, Pages

  Grebennikov, Andrei ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

Doherty architecture; gallium nitride (GaN); high electron mobility transistor (HEMT); inverse Class F; RF power amplifier; transmission line

Indexed keywords

DOHERTY ARCHITECTURE; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); INVERSE CLASS F; RF POWER AMPLIFIERS; TRANSMISSION LINE;

DOHERTY AMPLIFIERS; EFFICIENCY; ELECTRIC LINES; ELECTRON MOBILITY; GALLIUM NITRIDE; NETWORK ARCHITECTURE; SINGLE ELECTRON TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80052310367     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2011.5972568     Document Type: Conference Paper

References (9)

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