A feedback spin-valve memristive system

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 59, Issue 10, 2012, Pages 2405-2412

  Cai, Weiran ^a   Schmidt, Torsten ^a   Jörges, Udo ^a   Ellinger, Frank ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Hall effect; memristive system; nonlinear dynamics; spintronics

Indexed keywords

DYNAMICS; FEEDBACK; GIANT MAGNETORESISTANCE; HALL EFFECT; MEMRISTORS; SPIN HALL EFFECT; SPINTRONICS;

ELECTRONIC SYSTEMS; FEED-BACK LOOP; FLOQUET EXPONENTS; GIANT MAGNETORESISTIVE; HYSTERETIC LOOP; MEMORY SYSTEMS; MEMRISTIVE SYSTEMS; SELF-CROSSING;

HALL EFFECT DEVICES;

EID: 84867336683     PISSN: 15498328     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2012.2189043     Document Type: Article

References (26)

1. L. O. Chua, "Memristor-The missing circuit element," IEEE Trans. Circuit Theory, vol. CT-18, no. 5, pp. 507-519, Sep. 1971.
2. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," Nature, vol. 453, no. 7191, pp. 80-83, May 2008. (Pubitemid 351630336)
3. M. D. Ventra, Y. V. Pershin, and L. O. Chua, "Circuit elements with memory:Memristors, memcapacitors andmeminductors," Proc. IEEE, vol. 97, no. 10, pp. 1717-1724, Oct. 2009.
4. B. Linares-Barranco and T. Serrano-Gotarredona, "Memristance can explain spike-time-dependent-plasticity in neural synapses," Nature Precedings [Online]. Available: http://precedings.nature.com/documents/3010/ version/1, hdl:10101/npre.2009.3010.1
5. S. H. Jo,T.Chang, I.Ebong, B.B. Bhadviya, P.Mazumder, and W. Lu, "Nanoscale memristor device as synapse in neuromorphic systems," Nano Lett., vol. 10, no. 4, pp. 1297-1301, Mar. 2010.
6. Y. V. Pershin, S. L. Fontaine, andM.D.Ventra, "Memristive model of amoeba learning," Phys. Rev. E, vol. 80, no. 2, p. 021926, Aug. 2009.
7. Y. V. Pershin andM. D. Ventra, "Experimental demonstration of associative memory with memristive neural networks," Neural Netw., vol. 23, no. 7, pp. 881-886, Sep. 2010.
8. C. Schindler, G. Staikov, and R. Waser, "Electrode kinetics of Cu-SiO-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories," Appl. Phys. Lett., vol. 94, no. 7, pp. 072 109-072 111, 2009.
9. L. Cai, M. Cabassi, H. Yoon, O. Cabarcos, C. McGuiness, A. Flatt, D. Allara, J. Tour, and T. Mayer, "Reversible bistable switching in nanoscale thiol-substituted oligoaniline molecular junctions," Nano Lett., vol. 5, no. 12, pp. 2365-2372, Nov. 2005. (Pubitemid 43088879)
10. I. H. Inoue, S. Yasuda, H. Akinaga, and H. Takagi, "Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution," Phys. Rev. B, vol. 77, no. 3, pp. 035 105-035 111, Jan. 2008.
11. K. Sonoda, A. Sakai, M. Moniwa, K. Ishikawa, O. Tsuchiya, and Y. Inoue, "A compactmodel of phase-change memory based on rate equations of crystallization and amorphization," IEEE Trans. Electron Devices, vol. 55, no. 7, pp. 1672-1681, Jul. 2008.
12. Y. V. Pershin and M. D. Ventra, "Frequency doubling and memory effects in the spin Hall effect," Phys. Rev. B, vol. 79, no. 15, pp. 153 307-153 310, Apr. 2009.
13. X. Y.Wang,H.X. Chen,H. Li, and D. Dimitrov, "Spintronicmemristor through spin-torque-induced magnetization motion," Electron Device Lett., vol. 30, no. 3, pp. 294-297, Mar. 2009.
14. Y. V. Pershin and M. D. Ventra, "Spin memristive systems: Spin memory effects in semiconductor spintronics," Phys. Rev. B, vol. 78, no. 11, pp. 113 309-113 312, Sep. 2008.
15. A. M. Bratkovsky, "Spintronic effects in metallic, semiconductor, metal-oxide and metal-semiconductor heterostructures," Rep. Prog. Phys., vol. 71, pp. 026 502-026 532, 2008.
16. M.N.Baibich, J.M.Broto,A. Fert, F. N. V. Dau, F. Petroff, P. Eitenne, G. Creuzet, A. Friederich, and J. Chazelas, "Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices," Phys. Rev. Lett., vol. 61, no. 21, pp. 2472-2475, Nov. 1988.
17. G. Binasch, P. Grünberg, F. Saurenbach, and W. Zinn, "Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange," Phys. Rev. B, vol. 39, no. 7, pp. 4828-4830, Mar. 1989.
18. P. Allia,M. Knobel, P. Tiberto, and F. Vinai, "Magnetic properties and giant magnetoresistance of melt-spun granular Cu-Co alloys," Phys. Rev. B, vol. 52, no. 21, pp. 15 398-15 411, Dec. 1995.
19. M. El-Hilo, R.W. Chantrell, and K. O'Grady, "A model of interaction effects in granular magnetic solids," J. Appl. Phys., vol. 84, no. 9, pp. 5114-5122, 1998. (Pubitemid 128559614)
20. E. Hall, "On a new action of the magnet on electric currents," Amer. J. Math., vol. 2, no. 3, pp. 287-292, 1879, retrieved 2008. 02. 28.
21. J. W. P. Pratt, S. R. Lee, J. M. Slaughter, R. Loloee, P. A. Schroeder, and J. Bass, "Perpendicular giant magnetoresistances of Ag/Co multilayers," Phys. Rev. Lett., vol. 66, no. 23, pp. 3060-3063, Jun. 1991.
22. S. F. Lee,W. P. Pratt, Q. Yang, P. Holody, R. Loloee, P. A. Schroeder, and J. Bass, "Two-channel analysis of CPP-MR data for Ag/Co and AgSn/Comultilayers," J. Magn.Magn. Mater., vol. 118, no. 1, pp. 1-5, Jan. 1993.
23. S. B. Kumar, M. B. A. Jalil, S. G. Tan, and Z. Y. Leong, "Magnetoresistance effects arising from interfacial resistance in a current-perpendicular-to-plane spin-valve trilayer," Phys. Rev. B, vol. 74, no. 18, pp. 184 426-184 430, Nov. 2006.
24. M. A. Armstrong, Basic Topology. New York: Springer, 1983.
25. S. Strogatz, Nonlinear Dynamics and Chaos: With Applications to Physics, Biology, Chemistry, and Engineering. New York: Perseus, 1994.
26. L. O. Chua, "Resistance switching memories are memristors," Appl. Phys. A, vol. 102, no. 4, pp. 765-783, 2011.