Low-loss amorphous silicon multilayer waveguides vertically stacked on silicon-on-insulator substrate

Japanese Journal of Applied Physics

Volumn 50, Issue 12, 2011, Pages

  Kang, Joon Hyun ^a   Atsumi, Yuki ^a   Oda, Manabu ^a   Amemiya, Tomohiro ^a   Nishiyama, Nobuhiko ^a   Arai, Shigehisa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; LOSS CHARACTERISTICS; LOW LOSS; LOW-LOSS WAVEGUIDES; PROCESS COMPATIBILITY; PROCESS TEMPERATURE; PROPAGATION LOSS; SIDEWALL ROUGHNESS; SILICON MULTILAYERS; SILICON-ON-INSULATOR SUBSTRATES; STACKED LAYER;

METALLIC COMPOUNDS; MOS DEVICES; MULTILAYERS; OPTICAL MULTILAYERS; SILICON; SUBSTRATES; SURFACE ROUGHNESS; WAVEGUIDES;

AMORPHOUS SILICON;

EID: 82955221722     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.120208     Document Type: Article

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