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Journal of Applied Physics

Volumn 112, Issue 6, 2012, Pages

Comparative study of surface recombination in hexagonal GaN and ZnO surfaces

(6) Onuma, T a,b Sakai, N b Igaki, T b Yamaguchi, T b Yamaguchi, A A c Honda, T b

a TOKYO NATIONAL COLLEGE OF TECHNOLOGY (Japan)

b KOGAKUIN UNIVERSITY (Japan)

c KANAZAWA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE STUDIES; HEXAGONAL GAN; M-PLANE; PHOTOEXCITED CARRIERS; PL INTENSITY; RATE-EQUATION MODELS; RECOMBINATION PROCESS; SURFACE BAND BENDING; SURFACE ORIENTATION; SURFACE RECOMBINATIONS; TIME-RESOLVED PHOTOLUMINESCENCE; ZNO CRYSTALS; ZNO SURFACE;

GALLIUM NITRIDE; NUMERICAL ANALYSIS;

ZINC OXIDE;

EID: 84867080222 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4752429 Document Type: Article

Times cited : (22)

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