Surface recombination of hexagonal GaN crystals

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2321-2323

  Onuma, Takeyoshi ^a   Sakai, Naoyuki ^b   Okuhata, Takashi ^b   Yamaguchi, Atsushi A ^c   Honda, Tohru ^b  

^a TOKYO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b KOGAKUIN UNIVERSITY   (Japan)

^c KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaN; Photoluminescence; Surface recombination; Time resolved photoluminescence

Indexed keywords

EMISSION PROPERTIES; EXCITATION POWER DENSITY; FREESTANDING GAN; GAN; HEXAGONAL GAN; LOW TEMPERATURES; PHOTOLUMINESCENCE MEASUREMENTS; SURFACE BAND BENDING; SURFACE RECOMBINATION; SURFACE RECOMBINATION PROCESS; SURFACE RECOMBINATIONS; TIME-RESOLVED PHOTOLUMINESCENCE;

HYDROFLUORIC ACID; PHOTOLUMINESCENCE;

GALLIUM NITRIDE;

EID: 79960735938     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201001013     Document Type: Article

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