Epitaxial (111) films of Cu, Ni, and Cu xNi y on α-Al 2O 3 (0001) for graphene growth by chemical vapor deposition

Journal of Applied Physics

Volumn 112, Issue 6, 2012, Pages

  Miller, David L ^a   Keller, Mark W ^a   Shaw, Justin M ^a   Chiaramonti, Ann N ^a   Keller, Robert R ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BACK SCATTER DIFFRACTION; EPITAXIAL RELATIONSHIPS; GRAPHENE GROWTH; IN-PLANE ORIENTATION; LENGTH SCALE; METAL DEPOSITION; METAL THICKNESS; NI FILMS; POLYCRYSTALLINE; THICKNESS VARIATION; TOTAL PRESSURE; TUBE FURNACES;

ALUMINUM; CHEMICAL VAPOR DEPOSITION; EPITAXIAL FILMS; EPITAXIAL GROWTH; GRAPHENE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

COPPER;

EID: 84867065308     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4754013     Document Type: Article

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