Plasma-enhanced atomic layer deposition of Cu-Mn films with formation of a MnSi xO y barrier layer

Thin Solid Films

Volumn 521, Issue , 2012, Pages 146-149

  Moon, Dae Yong ^a   Han, Dong Suk ^a   Park, Jae Hyung ^a   Shin, Sae Young ^a   Park, Jong Wan ^a   Kim, Baek Mann ^b   Cho, Jun Yeol ^b  

^a Hanyang University   (South Korea)

^b Hyundai Motor Co   (South Korea)

Author keywords

Atomic layer deposition; Cu interconnect; Cu seed layer; Manganese silicate; Self forming barrier

Indexed keywords

ALLOY FILM; ATOMIC PERCENT; BARRIER LAYERS; CU INTERCONNECT; ELECTROCHEMICAL PLATING; LOW TEMPERATURES; LOW-TEMPERATURE PROCESS; MANGANESE-SILICATE; MN ATOMS; MN CONTENT; OUT-DIFFUSION; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SEED LAYER; SELF-FORMING BARRIER;

ATOMIC LAYER DEPOSITION; DEPOSITS; INTERFACES (MATERIALS); MANGANESE; MANGANESE ALLOYS; MANGANESE OXIDE; SILICATES; TEMPERATURE;

COPPER;

EID: 84867055804     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.02.015     Document Type: Conference Paper

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