2-D finite-element modeling of ZnO schottky diodes with large ideality factors

IEEE Transactions on Electron Devices

Volumn 59, Issue 10, 2012, Pages 2762-2766

  Arcari, Mario ^a   Scarpa, Giuseppe ^a   Lugli, Paolo ^a   Tallarida, Graziella ^b   Huby, N ^b   Guziewicz, E ^c   Krajewski, Tomasz A ^c   Godlewski, M ^c  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b Institute for Microelectronics and Microsystems   (Italy)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

Crossbar memory; high ideality factor; Schottky junction modeling; zinc oxide (ZnO) contacts

Indexed keywords

CROSS-BAR MEMORIES; ELECTRICAL BEHAVIORS; FINITE ELEMENT MODELING; FINITE-ELEMENT; IDEALITY FACTORS; INTERFACE CHARGE; LOW TEMPERATURES; RECTIFYING PROPERTIES; SCHOTTKY BARRIERS; SCHOTTKY DIODES; ZINC OXIDE (ZNO); ZNO;

ELECTRIC PROPERTIES; FINITE ELEMENT METHOD; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION;

ZINC OXIDE;

EID: 84866734747     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2207459     Document Type: Article

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