Residual stress improvement of platinum thin film in Au/Pt/Ti/p-GaAs ohmic contact by RF sputtering power

Applied Surface Science

Volumn 260, Issue , 2012, Pages 77-79

  Parvizian, M ^a   Rahimi Ashtari, F ^a   Goodarzi, A ^a   Sabrloui, B ^a   Sabaghzade, J ^a   Zabihi, M S ^a  

^a IRANIAN NATIONAL CENTER FOR LASER SCIENCE AND TECHNOLOGY   (Iran)

Author keywords

Microstructure; Platinum; Residual stress; RF sputtering power

Indexed keywords

ELECTRIC CONTACTORS; GALLIUM ARSENIDE; GRAIN SIZE AND SHAPE; III-V SEMICONDUCTORS; MICROSTRUCTURE; OHMIC CONTACTS; RESIDUAL STRESSES; SEMICONDUCTING GALLIUM; SILICA; SPUTTERING; SUBSTRATES; THIN FILMS; TITANIUM;

DEPOSITION POWER; GAAS SUBSTRATES; PLATINUM THIN FILM; POWER INCREASE; RF SPUTTERING DEPOSITION; RF SPUTTERING POWER; STRESS CHANGES; SUBSTRATE CURVATURE;

PLATINUM;

EID: 84866733894     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.05.146     Document Type: Conference Paper

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