Flexible nanoscale memory device based on resistive switching in Nickel Oxide thin film

Nanoscience and Nanotechnology Letters

Volumn 4, Issue 9, 2012, Pages 940-943

  Yu, Q ^a   Lim, W M ^b   Hu, S G ^a   Chen, T P ^b   Deng, L J ^a   Liu, Y ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Nanoscale Memory; Resistive Switching

Indexed keywords

HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MEMORY STATE; MEMORY WINDOW; NANO SCALE; NICKEL OXIDE THIN FILMS; NIO THIN FILM; RESISTANCE RATIO; RESISTIVE SWITCHING; TIME FRAME; VOLTAGE PULSE;

ELECTRIC POTENTIAL; EXPERIMENTS; NANOTECHNOLOGY; NICKEL OXIDE; THIN FILMS;

SWITCHING SYSTEMS;

EID: 84866622320     PISSN: 19414900     EISSN: 19414919     Source Type: Journal    
DOI: 10.1166/nnl.2012.1398     Document Type: Article

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