Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces

Physical Review Letters

Volumn 109, Issue 12, 2012, Pages

  Luna, Esperanza ^a   Guzmán, Álvaro ^a,c   Trampert, Achim ^a   Álvarez, Gabriel ^b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL IDENTITY; CHEMICAL PROFILES; COMPOSITION PROFILE; COOPERATIVE EFFECTS; FUNCTIONAL DEPENDENCE; HETERO-INTERFACES; III-NITRIDES; INTERFACE DEVELOPMENT; INTERFACIAL WIDTH; ISLAND FORMATION; ISLAND GROWTH; MATERIAL SYSTEMS; MINIMUM VALUE; QUATERNARY COMPOUND; SIGMOIDAL SHAPE; STICKING COEFFICIENTS; SURFACE COVERAGES; UNIVERSAL BEHAVIORS;

ARSENIC COMPOUNDS; NITRIDES; SEMICONDUCTOR GROWTH;

TWO DIMENSIONAL;

EID: 84866536038     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.109.126101     Document Type: Article

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