Black Silicon formation using dry etching for solar cells applications

Materials Science and Engineering: B

Volumn 177, Issue 16, 2012, Pages 1509-1513

  Murias, D ^a   Reyes Betanzo, C ^a   Moreno, M ^a   Torres, A ^a   Itzmoyotl, A ^a   Ambrosio, R ^b   Soriano, M ^b   Lucas, J ^c   Cabarrocas, P Roca I ^d  

^a INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

^b UNIVERSIDAD AUTÓNOMA DE CIUDAD JUÁREZ   (Mexico)

^c Instituto Tecnologico de   (Mexico)

^d LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Plasma; Solar cells; Texturing

Indexed keywords

DRY ETCHING; FLOW OF GASES; PLASMA ETCHING; REACTIVE ION ETCHING; SILICON; SILICON SOLAR CELLS;

BLACK SILICON; CH 4; CHAMBER PRESSURE; CRYSTALLINE SILICON SURFACES; ETCHING SYSTEMS; PROCESS TIME; REACTIVE-ION ETCHING; RF POWER; SILICON SURFACES; SOLAR-CELL APPLICATIONS;

SULFUR HEXAFLUORIDE;

EID: 84866010803     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2012.03.038     Document Type: Conference Paper

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