Fabrication of highly ordered silicon nanowire arrays with controllable sidewall profiles for achieving low-surface reflection

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 4, 2011, Pages 869-877

  Hung, Yung Jr ^a   Lee, San Liang ^a   Thibeault, Brian J ^b   Coldren, Larry A ^b  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b University of California   (United States)

Author keywords

Antireflection (AR); holography lithography; silicon nanowire array (SNWA); single step deep reactive ion etching (SDRIE)

Indexed keywords

ANTIREFLECTION; ANTIREFLECTIVE; ARGON PLASMA TREATMENT; DEEP REACTIVE ION ETCHING; ETCHING PROCESS; FILLING FACTOR; PATTERNED PHOTORESISTS; SHARP TIP; SIDEWALL ANGLES; SIDEWALL PROFILES; SILICON NANOWIRE ARRAY (SNWA); SILICON NANOWIRE ARRAYS; SILICON-ON-INSULATOR SUBSTRATES; SIMPLE APPROACH; SINGLE-STEP;

ARGON; HOLOGRAPHY; NANOWIRES; PHOTORESISTS; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SILICA;

REACTIVE ION ETCHING;

EID: 80051681555     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2010.2068540     Document Type: Article

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