The electrical and structural properties of the hydrogenated amorphous carbon films grown by close field unbalanced magnetron sputtering

Thin Solid Films

Volumn 482, Issue 1-2, 2005, Pages 275-279

  Park, Yong Seob ^a   Myung, Hyun Sik ^a   Han, Jeon Geon ^a   Hong, Byungyou ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

C V (capacitance vs. voltage); CFUBM sputtering; Hydrogenated amorphous carbon; I V (current vs. voltage); Raman; Tribological

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; MAGNETIC DISK STORAGE; MAGNETRON SPUTTERING; MICROELECTRONICS; RAMAN SPECTROSCOPY; WEAR RESISTANCE;

C-V (CAPACITANCE VS. VOLTAGE); CFUBM SPUTTERING; HYDROGENATED AMORPHOUS CARBON; I-V (CURRENT VS. VOLTAGE); TRIBOLOGICAL;

AMORPHOUS FILMS;

EID: 17644412885     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.160     Document Type: Conference Paper

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