Graphene-side-gate engineering

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 330-332

  Chen, Ching Tzu ^a   Low, Tony ^a   Chiu, Hsin Ying ^b   Zhu, Wenjuan ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b UNIVERSITY OF KANSAS   (United States)

Author keywords

Electrostatics; graphene field effect transistor (FET); side gate

Indexed keywords

BI-LAYER; ELECTRICAL TRANSPORT CHARACTERISTICS; MESOSCOPIC DEVICES; MODULATION EFFICIENCY; SIDE GATE; TRANSPORT MEASUREMENTS; VOLTAGE BIASING;

ELECTROSTATIC DEVICES; ELECTROSTATICS; FIELD EFFECT TRANSISTORS; MONOLAYERS;

GRAPHENE;

EID: 84862825729     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2180355     Document Type: Article

References (9)

1. C. Stampfer, J. Güttinger, F. Molitor, D. Graf, T. Ihn, and K. Ensslin, "Tunable Coulomb blockade in nanostructured graphene," Appl. Phys. Lett., vol. 92, no. 1, p. 012102, Jan. 2008.
2. L. A. Ponomarenko, F. Schendin, M. I. Katsnelson, R. Yang, E. W. Hill, K. S. Novoselov, and A. K. Geim, "Chaotic Dirac billiard in graphene quantum dots," Science, vol. 320, no. 5874, pp. 356-358, Apr. 2008. (Pubitemid 351555654)
3. Y.-M. Lin, H.-Y. Chiu, K. A. Jenkins, D. B. Farmer, P. Avouris, and A. Valdes-Garcia, "Dual-gate graphene FETs with f(T) of 50 GHz," IEEE Electron Device Lett., vol. 31, no. 1, pp. 68-70, Jan. 2010.
4. Q. Zhang, T. Fang, H.-L. Xing, A. Seabaugh, and D. Jena, "Graphene nanoribbon tunnel transistor," IEEE Electron Device Lett., vol. 29, no. 12, pp. 1344-1346, Dec. 2008.
5. X. Li, X. Wu, M. Sprinkle, F. Ming, M. Ruan, Y. Hu, C. Berger, and W. A. deHeer, "Top-and side-gated epitaxial graphene field effect transistors," Phys. Stat. Sol. A, vol. 207, no. 2, pp. 286-290, Feb. 2010.
6. H.-Y. Chen and J. Appenzeller, "Complementary-type graphene inverters operating at room-temperature," in Proc. 69th Annu. DRC, Jun. 2011, pp. 33-34.
7. F. Molitor, J. Güttinger, C. Stampfer, D. Graf, T. Ihn, and K. Ensslin, "Local gating of a graphene Hall bar by graphene side gates," Phys. Rev. B, Condens. Matter, vol. 76, no. 24, p. 245 426, Dec. 2007.
8. J. F. Tian, L. A. Jauregui, G. Lopez, H. Cao, and Y. P. Chen, "Ambipolar graphene field effect transistors by local metal side gates," Appl. Phys. Lett., vol. 96, no. 26, p. 263 110, Jul. 2010.
9. W. Zhu, D. Neumayer, V. Perebeinos, and P. Avouris, "Silicon nitride gate dielectrics and band gap engineering in graphene layers," Nano Lett., vol. 10, no. 9, pp. 3572-3576, Aug. 2010.