Evaluation of direct patternable inorganic spin-on hard mask materials using electron beam lithography

Microelectronic Engineering

Volumn 98, Issue , 2012, Pages 226-229

  Thrun, Xaver ^a   Choi, Kang Hoon ^a   Freitag, Martin ^a   Grenville, Andrew ^b   Gutsch, Manuela ^a   Hohle, Christoph ^a   Stowers, Jason K ^b   Bartha, Johann W ^c  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b Inpria Corporation   (United States)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

22 nm SRAM; Direct patterned spin on hard mask; E beam direct write; High resolution; Inorganic resist

Indexed keywords

300 MM WAFERS; CMOS MANUFACTURING; DIRECT WRITE; FRAUNHOFER; HIGH RESOLUTION; INORGANIC RESIST; PROCESS CHARACTERISTICS; REAL APPLICATIONS; SPIN-ON HARD MASKS;

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; HAFNIUM OXIDES;

COATED MATERIALS;

EID: 84865597801     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2012.07.017     Document Type: Conference Paper

References (8)

1. K. Keil, P. Jaschinsky, C. Hohle, K.-H. Choi, R. Schneider, M. Tesauro, F. Thrum, R. Zimmermann, and J. Kretz Proc. SPIE 7470 2009 747017
2. ITRS Lithography Roadmap 2011, Chart page 14.
3. A. Robinson, H. Zaid, F. Gibbons, R. Palmer, M. Manickam, J. Preece, R. Brainard, T. Zampini, and K. O'Connell Microelectron. Eng. 83 2006 1115 1118
4. J. Stowers, and D.A. Keszler Microelectron. Eng. 86 2009 730
5. P. Naulleau, C.N. Anderson, L.-M. Baclea-an, P. Denham, S. George, K.A. Goldberg, G. Jones, B. McClinton, R. Miyakawa, I. Mochi, W. Montgomery, S. Rekawa, and T. Wallow Proc. SPIE 7985 2011 798509
6. J.K. Stowers, A. Telecky, M. Kocsis, B.L. Clark, D.A. Keszler, A. Grenville, C.N. Anderson, and P.P. Naulleau Proc. SPIE 7969 2011 796915
7. K. Keil, K.-H. Choi, C. Hohle, J. Kretz, L. Szikszai, and J.-W. Bartha J. Vac. Sci. Technol. B 27 1 2009 47
8. ITRS Lithography Roadmap 2011, Table LITH3B (Resist Sensitivities).