Detailed characterization of hydrogen silsesquioxane for e-beam applications in a dynamic random access memory pilot line environment

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 47-51

  Keil, K ^a   Choi, K H ^b   Hohle, C ^b   Kretz, J ^b   Szikszai, L ^a   Bartha, J W ^c  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; HYDROGEN; MOLECULAR STRUCTURE; RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; STRONTIUM COMPOUNDS; WINDOWS;

CONTRAST MEASUREMENTS; DYNAMIC RANDOM ACCESS MEMORIES; E-BEAM PROXIMITY EFFECTS; ELECTRON-BEAM RESISTS; FOURIER TRANSFORM INFRARED; FRAUNHOFER; FT-IR ANALYSIS; HARD MASKS; HYDROGEN-SILSESQUIOXANE; PILOT LINES; PROCESS WINDOWS; STRUCTURE CHANGES; WORKING POINTS;

ELECTRON BEAM LITHOGRAPHY;

EID: 59949096077     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3039692     Document Type: Article

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