High-frequency modeling of poly-Si thin-film transistors for low-cost RF applications

IEEE Transactions on Electron Devices

Volumn 59, Issue 9, 2012, Pages 2296-2301

  Kim, Soo Youn ^a   Loke, Wing Fai ^a   Jung, Byunghoo ^a   Roy, Kaushik ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Distortion; grain boundary (GB); linearity; radio frequency (RF); spiral inductor; thin film transistor (TFT)

Indexed keywords

BULK CMOS; CHANNEL LENGTH; DEVICE SIMULATIONS; ELECTROMAGNETIC SIMULATION; HIGH FREQUENCY CHARACTERISTICS; HIGH QUALITY; HIGH-FREQUENCY MODELING; INSULATING SUBSTRATES; LINEARITY; LOW TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS; LTPS-TFT; ON-CHIP SPIRAL INDUCTORS; PARASITICS; POLY-SI THIN-FILM TRANSISTORS; Q-FACTORS; RADIO FREQUENCIES; RADIO FREQUENCY APPLICATIONS; RF APPLICATIONS; SELF-RESONANCE FREQUENCY; SPIRAL INDUCTOR; SUBSTRATE LOSS; THIN-FILM TRANSISTOR (TFTS);

DISTORTION (WAVES); ELECTRIC INDUCTORS; GRAIN BOUNDARIES; RADIO WAVES; SEMICONDUCTING ORGANIC COMPOUNDS; SUBSTRATES; THIN FILM TRANSISTORS;

POLYSILICON;

EID: 84865565397     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2202238     Document Type: Article

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