On the conduction mechanism in polycrystalline silicon thin-film transistors

IEEE Transactions on Electron Devices

Volumn 51, Issue 11, 2004, Pages 1856-1866

  Walker, Andrew J ^a   Herner, S Brad ^a   Kumar, Tanmay ^a   Chen, En Hsing ^a  

^a Matrix Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTRON ENERGY LEVELS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SINGLE CRYSTALS; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

GRAIN SIZE DISTRIBUTION; POLYSILICON THIN FILM;

THIN FILM TRANSISTORS;

EID: 8344221987     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.837388     Document Type: Article

References (46)

1. S. D. Brotherton, "Polycrystalline silicon thin-film transistors," Semicond. Sci. Technol., vol. 10, pp. 721-738, 1995.
2. S. D. S. Malhi, H. Shichijo, S. K. Banerjee, R. Sundaresan, M. Elahy, G. P. Pollack, W. F. Richardson, A. H. Shah, L. R. Hite, R. H. Womack, P. K. Chatterjee, and H. W. Lam, "Characteristics and three-dimensional integration of MOSFETs in small-grain LPCVD polycrystalline silicon," IEEE J. Solid-State Circuits, vol. SSC-20, pp. 178-201, Feb. 1985.
3. A. J. Walker, S. Nallamothu, E.-H. Chen, M. Mahajani, S. B. Herner, M. Clark, J. M. Cleeves, S. V. Dunton, V. L. Eckert, J. Gu, S. Hu, J. Knall, M. Konevecki, C. Petti, S. Radigan, U. Raghuram, J. Vienna, and M. A. Vyvoda, "3D TFT-SONOS memory cell for ultra-high density file storage applications," in Symp. VLSI Tech. Dig., June 2003, pp. 29-30.
4. T. I. Kamins, "Hall mobility in chemically deposited polycrystalline silicon," J. Appl. Phys., vol. 42, pp. 4375-4365, 1971.
5. J. Y. W. Seto, "The electrical properties of polycrystalline silicon films," J. Appl. Phys., vol. 46, pp. 5247-5254, Dec. 1975.
6. G. Baccarani, B. Ricco, and G. Spadini, "Transport properties of polycrystalline silicon films," J. Appl. Phys., vol. 49, pp. 5565-5570, Nov. 1978.
7. M. M. Mandurah, K. C. Saraswat. and T. I. Kamins, "A model for conduction in polycrystalline silicon - Part I: Theory," IEEE Trans. Electron Devices, vol. ED-28, pp. 1163-1171, Oct. 1981.
8. M. M. Mandurah, K. C. Saraswat, and T. I. Kamins, "A model for conduction in polycrystalline silicon - Part II: Comparison of theory and experiment," IEEE Trans. Electron Devices, vol. ED-28, pp. 1171-1176, Oct. 1981.
9. M. Hirose, M. Taniguchi, and Y. Osaka, "Electronic properties of chemically deposited polycrystalline silicon," J. Appl. Phys., vol. 50, pp. 377-382, Jan. 1979.
10. M. E. Cower and T. O. Sedgwick, J. Electrochem. Soc., vol. 119, p. 1565, 1972.
11. J. Levinson, F. R. Shepherd, P. J. Scanlon, W. D. Westwood, G. Este, and M. Rider, "Conductivity behavior in polycrystalline semiconductor thin film transistors," J. Appl. Phys., vol. 53, pp. 1193-1202, Feb. 1982.
12. C. A. Dimitriadis, "Grain boundary trap distribution in polycrystalline silicon thin-film transistors," J. Appl. Phys., vol. 73, pp. 4086-4088, April 1993.
13. P.-S. Lin, J.-Y. Guo, and C.-Y. Wu, "A quasi-two-dimensional analytical model for the turn-on characteristics of polysilicon thin-film transistors," IEEE Trans. Electron Devices, vol. 37, pp. 666-674, Mar. 1990.
14. T.-S. Li and P.-S. Lin, "On the pseudo-subthreshold characteristics of polycrystalline-silicon thin-film transistors with large grain size," IEEE Electron Device Lett., vol. 14, pp. 240-242, May 1993.
15. C. A. Dimitriadis and D. H. Tassis, "On the threshold voltage and channel conductance of polycrystalline silicon thin-film transistors," J. Appl. Phys., vol. 79, pp. 4431-4437, Apr. 1996.
16. J. G. Fossum, A. Ortiz-Conde, H. Shichijo, and S. K. Banerjee, " Anomalous leakage current in LPCVD poly-silicon MOSFETs," IEEE Trans. Electron Devices, vol. ED-32, pp. 1878-1884, 1985.
17. W. E. Spear and P. G. Le Comber, "Investigation of the localized state distribution in amorphous Si films," J. Non-Cryst. Solids, vol. 8-10, pp. 727-738, 1972.
18. A. Madan, P. G. Le Comber, and W. E. Spear, "Investigation of the density of localized states in a-Si using the field effect technique," J. Non-Cryst. Solids, vol. 20, pp. 239-257, 1976.
19. N. B. Goodman and H. Fritzche, Philos Mag. B, Phys. Condens. Matter Electron. Opt. Magn. Prop., vol. 42, pp. 149-149, 1980.
20. M. J. Powell, Philos. Mag. B, Phys. Condens. Matter Electron. Opt. Magn. Prop., vol. 43, pp. 93-93, 1981.
21. T. Suzuki, Y. Osaka, and M. Hirose, Jpn. J. Appl. Phys., vol. 21, no. L159, 1982.
22. J. D. Cohen, "Hydrogenated amorphous silicon," in Semiconductors and Semimetals, J. I. Pankove, Ed. Orlando, FL: Academic, 1984, pt. C, vol. 21, ch. 2.
23. G. Fortunato and P. Migliorato, "Determination of gap state density in polycrystalline silicon by field-effect conductance," Appl. Phys. Lett., vol. 49, pp. 1025-1027, Oct. 1986.
24. G. Fortunato, D. B. Meakin, P. Migliorato, and P. G. Le Comber, Philos. Mag. B, Phys. Condens. Matter Electron. Opt. Magn. Prop., vol. 57, pp. 573-573, 1988.
25. 0.2 films," Appl. Phys. Lett., vol. 61, pp. 672-674, Aug. 1992.
26. L. Colalongo, M. Valdinoci, and G. Baccarani, "Investigation on anomalous leakage currents in Poly-TFTs including dynamic effects," IEEE Trans. Electron Devices, vol. 44, pp. 2106-2112, Nov. 1997.
27. O. K. B. Lui, M. J. Quinn, S. W.-B. Tam, T. M. Brown, P. Migliorato, and H. Ohshima, "Investigation of the low field leakage current mechanism in polysilicon TFTs," IEEE Trans. Electron Devices, vol. 45, pp. 213-217, Jan. 1998.
28. J. P. Colinge, E. Demoulin, F. Delannay, M. Lobet, and J. M. Temerson, J. Electrochem. Soc., vol. 128, pp. 2009-2009, 1981.
29. B. Loisel, L. Haji, P. Joubert, and M. Guendouz, Polycrystalline Semiconductors: Grain Boundaries and Interfaces, H. J. Moller. H. P. Strunk, and J. H. Werner, Eds. New York: Springer-Verlag, 1988, Springer Proc. Phys., pp. 283-283.
30. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
31. N. A. Hastas, D. H. Tassis, C. A. Dimitriadis, and G. Kamarinos, " Determination of interface and bulk traps in the subthreshold region of polycrystalline silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 50, pp. 1991-1994, Sept. 2003.
32. E. H. Nicollian and A. Goetzberger, "MOS conductance technique for measuring surface state parameters," Appl. Phys. Lett., vol. 7, pp. 216-216, 1965.
33. 2," in Proc. IEEE Int. Conf. Microelectronic Test Structures, 2001, pp. 65-70.
34. J. R. Ayres, "Characterization of trapping states in polycrystalline-silicon thin-film transistors by deep level transient spectroscopy," J. Appl. Phys., vol. 74, pp. 1787-1792, Aug. 1993.
35. M. Hirose, M. Taniguchi, and Y. Osaka, "Electronic properties of chemically deposited polycrystalline silicon," J. Appl. Phys., vol. 50, pp. 377-382, Jan. 1979.
36. W. B. Jackson, N. M. Johnson, and D. K. Biegelsen, "Density of gap states of silicon grain boundaries determined by optical absorption," Appl. Phys. Lett., vol. 43, pp. 195-197, July 1983.
37. G. D. Cody, T. Tiedje, B. Abeles, B. Brooks, and Y. Goldstein, " Disorder and the optical-absorption edge of hydrogenated amorphous silicon," Phys. Rev. Lett., vol. 47, pp. 1480-1483, Nov. 1981.
38. P. W. Anderson, "Absence of diffusion in certain random lattices," Phys. Rev., vol. 109, pp. 1492-1505, Mar. 1958.
39. Nobel Lecture, Dec. 8, 1977.
40. R. A. Street, "Localized states in doped amorphous silicon," J. Non-Cryst. Solids, vol. 77-78, pp. 1-16, 1985.
41. J. M. Holender and G. J. Morgan, "Electron localization in models of hydrogenated amorphous silicon and pure amorphous silicon," Modeling Simul. Mater. Sci. Eng., vol. 2, pp. 1-8, 1994.
42. J. Dong and D. A. Drabold, "Atomistic structure of band-tail states in amorphous silicon," Phys. Rev. Lett., vol. 80, pp. 1928-1931, Mar. 1998.
43. F. Cleri, P. Keblinski, L. Colombo, S. R. Phillpot, and D. Wolf, " Correlation between atomic structure and localized gap states in silicon grain boundaries," Phys. Rev. B, Condens. Matter, vol. 57, pp. 6247-6250, March 1998.
44. O. K. B. Lui, S. W.-B. Tam, P. Migliorato, and T. Shimoda, "Method for the determination of bulk and interface density of states in thin-film transistors," J. Appl. Phys., vol. 89, pp. 6453-6458, June 2001.
45. A. W. Wang and K. C. Saraswat, "A strategy for modeling of variations due to grain size in polycrystalline thin-film transistors," IEEE Trans. Electron Devices, vol. 47, pp. 1035-1043, May 2000.
46. R. A. Street, Hydrogenated Amorphous Silicon, D. R. Clarke, S. Suresh, and I. M. Ward, Eds. Cambridge, U.K.: Cambridge Univ. Press, 2002.