Quantifying the effect of minority carrier diffusion and free carrier absorption on photoluminescence bulk lifetime imaging of silicon bricks

Solar Energy Materials and Solar Cells

Volumn 107, Issue , 2012, Pages 75-80

  Mitchell, Bernhard ^a   Greulich, Johannes ^b   Trupke, Thorsten ^a,c  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^c BT Imaging   (Australia)

Author keywords

Free carrier absorption; Lifetime; Photoluminescence imaging; Silicon bricks

Indexed keywords

BULK LIFETIME; CARRIER DIFFUSIONS; CZOCHRALSKI; FREE CARRIER ABSORPTION; LIFETIME; MILLISECOND RANGE; MINORITY CARRIER DIFFUSION; PHOTOLUMINESCENCE IMAGING; PHOTOLUMINESCENCE INTENSITIES; SOLAR CELL FABRICATION; SPATIALLY RESOLVED; UNDERLYING PRINCIPLES;

DIFFUSION; GRAIN BOUNDARIES; PHOTOLUMINESCENCE;

BRICK;

EID: 84865482624     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.07.022     Document Type: Article

References (34)

1. B. Mitchell, T. Trupke, J.W. Weber, and J. Nyhus Bulk minority carrier lifetimes and doping of silicon bricks from photoluminescence intensity ratios Journal of Applied Physics 109 2011 083111
2. T. Kirchartz, A. Helbig, and U. Rau Note on the interpretation of electroluminescence images using their spectral information Solar Energy Materials and Solar Cells 92 2008 1621 1627
3. B. Mitchell, J.W. Weber, D. Walter, D. Macdonald, T. Trupke, On the method of photoluminescence spectral intensity ratio imaging of silicon bricks: advances and limitations, Submitted for publication.
4. A. shkulkov, S. marchenko, B. chepurnoy, V. onishchenko, S. beringov, Y. cherpak, et al., multicrystalline silicon production for solar cells application by continuous induction melting in cold crucible (imcc), in: Proceedings of the 26th European Photovoltaic Conference, 2011, pp. 1923-1926.
5. X. Gu, X. Yu, K. Guo, L. Chen, D. Wang, and D. Yang Seed-assisted cast quasi-single crystalline silicon for photovoltaic application: towards high efficiency and low cost silicon solar cells Solar Energy Materials and Solar Cells 101 2012 95 101
6. M.A. Green Analytical expressions for spectral composition of band photoluminescence from silicon wafers and bricks Applied Physics Letters 99 2011 131112
7. Synopsys Inc. (〈 www.synopsys.com 〉), Sentaurus Device, 2012.
8. P.P. Altermatt, J.O. Schumacher, A. Cuevas, M.J. Kerr, S.W. Glunz, and R.R. King Numerical modeling of highly doped Si:P emitters based on FermiDirac statistics and self-consistent material parameters Journal of Applied Physics 92 2002 3187 3197
9. A. Schenk Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation Journal of Applied Physics 84 1998 3684 3695
10. P.P. Altermatt, A. Schenk, F. Geelhaar, and G. Heiser Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing Journal of Applied Physics 93 2003 1598 1603
11. D.B.M. Klaassen A unified mobility model for device simulation-I. Model equations and concentration dependence Solid-State Electronics 35 1992 953 959
12. D.B.M. Klaassen A unified mobility model for device simulation-II Temperature dependence of carrier mobility and lifetime Solid-State Electronics 35 1992 961 967
13. P.P. Altermatt Models for numerical device simulations of crystalline silicon solar cells - a review Journal of Computational Electronics 10 2011 314 330
14. T. Trupke, M.A. Green, P. Wuśrfel, P.P. Altermatt, A. Wang, and J. Zhao Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon Journal of Applied Physics 94 2003 4930
15. P.P. Altermatt, F. Geelhaar, T. Trupke, and X. Dai Injection dependence of spontaneous radiative recombination in crystalline silicon: Experimental verification and theoretical analysis Applied Physics Letters 88 2006
16. W. Shockley, and W.T. Read Statistics of the recombinations of holes and electrons Physical Review 87 1952
17. R.N. Hall Electron-hole recombination in germanium Physical Review 87 1952 387
18. W.D. Eades, and R.M. Swanson Calculation of surface generation and recombination velocities at the Si-SiO2 interface Journal of Applied Physics 58 1985 4267 4276
19. P.P. Altermatt, J.O. Schumacher, A. Cuevas, M.J. Kerr, S.W. Glunz, and R.R. King Numerical modeling of highly doped Si:P emitters based on FermiDirac statistics and self-consistent material parameters Journal of Applied Physics 92 2002 3187
20. M.A. Green Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients Solar Energy Materials and Solar Cells 92 2008 1305 1310
21. S. Bowden, and A. Sinton Determining lifetime in silicon blocks and wafers with accurate expressions for carrier density Journal of Applied Physics 102 2007 124501
22. P.A. Schumann, W.A. Keenan, A.H. Tong, H.H. Gegenwarth, and C.P. Schneider Silicon optical constants in the infrared Journal of the Electrochemical Society 118 1971 145 147
23. D.K. Schroder, N.R. Thomas, and J.C. Swartz Free carrier absorption in silicon, IEEE Journal of Solid-State Circuits 13 1978 180 187
24. J. Isenberg, and W. Warta Free carrier absorption in heavily doped silicon layers Applied Physics Letters 84 2004 2265 2267
25. W. Spitzer, and H. Fan Infrared absorption in n-type silicon Physical Review 108 1957 268 271
26. B.J. Lee, Z.M. Zhang, Temperature and doping dependence of the radiative properties of silicon: drude model revisited, in: Proceedings of the 13th International Conference on Advanced Thermal Processing of Semiconductors, 2005, pp. 251-260.
27. M.A. Green Silicon Solar Cells: Advanced Principles and Practice 1995
28. H. Hara, and Y. Nishi Free carrier absorption in p-type silicon Journal of the Physical Society of Japan 21 1966 1222
29. A. Richter, S.W. Glunz, F. Werner, J. Schmidt, A. Cuevas, Advanced parameterization of the Auger recombination in crystalline silicon, Submitted for publication.
30. M.J. Kerr, A. Cuevas, and P. Campbell Limiting efficiency of crystalline silicon solar cells due to Coulomb-enhanced Auger recombination Progress in Photovoltaics: Research and Applications 11 2003 97 104
31. P. Gundel, F.D. Heinz, M.C. Schubert, J.A. Giesecke, and W. Warta Quantitative carrier lifetime measurement with micron resolution Journal of Applied Physics 108 2010 033705
32. B. Michl, M. Rüdiger, J. a. Giesecke, M. Hermle, W. Warta, and M.C. Schubert Efficiency limiting bulk recombination in multicrystalline silicon solar cells Solar Energy Materials and Solar Cells. 98 2012 441 447
33. M.C. Schubert, W. Kwapil, J. Schön, H. Habenicht, M. Kasemann, and P. Gundel Analysis of performance limiting material properties of multicrystalline silicon Solar Energy Materials and Solar Cells 94 2010 1451 1456
34. J. Haunschild, M. Glatthaar, M. Demant, J. Nievendick, M. Motzko, and S. Rein Quality control of as-cut multicrystalline silicon wafers using photoluminescence imaging for solar cell production Solar Energy Materials and Solar Cells 94 2010 6 11