-
1
-
-
0021422389
-
Limits on the open-circuit voltage and efficiency of silicon solar cells imposed by intrinsic Auger processes
-
Green MA. Limits on the open-circuit voltage and efficiency of silicon solar cells imposed by intrinsic Auger processes. IEEE Transactions on Electron Devices 1984; ED-31(5): 671-678.
-
(1984)
IEEE Transactions on Electron Devices
, vol.ED-31
, Issue.5
, pp. 671-678
-
-
Green, M.A.1
-
2
-
-
0021422388
-
Limiting efficiency of silicon solar cells
-
Tiedje T, Yablonovitch E, Cody GD, Brooks EG. Limiting efficiency of silicon solar cells. IEEE Transactions on Electron Devices 1984; ED-31(5): 711-716.
-
(1984)
IEEE Transactions on Electron Devices
, vol.ED-31
, Issue.5
, pp. 711-716
-
-
Tiedje, T.1
Yablonovitch, E.2
Cody, G.D.3
Brooks, E.G.4
-
3
-
-
0000137910
-
Enhancement of band-to-band Auger recombination by electron-hole correlations
-
Hangleiter A, Hacker R. Enhancement of band-to-band Auger recombination by electron-hole correlations. Physical Review Letters 1990; 65(2): 215-218.
-
(1990)
Physical Review Letters
, vol.65
, Issue.2
, pp. 215-218
-
-
Hangleiter, A.1
Hacker, R.2
-
4
-
-
4243882773
-
Intrinsic upper limits of the carrier lifetime in silicon
-
Hacker R, Hangleiter A. Intrinsic upper limits of the carrier lifetime in silicon. Journal of Applied Physics 1994; 75(11): 7570-7572.
-
(1994)
Journal of Applied Physics
, vol.75
, Issue.11
, pp. 7570-7572
-
-
Hacker, R.1
Hangleiter, A.2
-
5
-
-
0000220982
-
Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon
-
Altermatt PP, Schmidt J, Heiser G, Aberle AG. Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon. Journal of Applied Physics 1997; 82(10): 4938-4944.
-
(1997)
Journal of Applied Physics
, vol.82
, Issue.10
, pp. 4938-4944
-
-
Altermatt, P.P.1
Schmidt, J.2
Heiser, G.3
Aberle, A.G.4
-
8
-
-
0032640794
-
Limiting efficiency of bulk and thin-film silicon solar cells in the presence of surface recombination
-
Green MA. Limiting efficiency of bulk and thin-film silicon solar cells in the presence of surface recombination. Progress in Photovoltaics: Research and Applications 1999; 7: 327-330.
-
(1999)
Progress in Photovoltaics: Research and Applications
, vol.7
, pp. 327-330
-
-
Green, M.A.1
-
9
-
-
33845421788
-
General parameterization of Auger recombination in crystalline silicon
-
Kerr MJ, Cuevas A, General parameterization of Auger recombination in crystalline silicon. Journal of Applied Physics 2002; 91(4): 2473-2480.
-
(2002)
Journal of Applied Physics
, vol.91
, Issue.4
, pp. 2473-2480
-
-
Kerr, M.J.1
Cuevas, A.2
-
10
-
-
0015974264
-
Temperature dependance of the radiative recombination coefficient in silicon
-
Schlangenotto H, Maeder H, Gerlach W. Temperature dependance of the radiative recombination coefficient in silicon. Physica Status Solidi A 1974; 21: 357-367.
-
(1974)
Physica Status Solidi A
, vol.21
, pp. 357-367
-
-
Schlangenotto, H.1
Maeder, H.2
Gerlach, W.3
-
11
-
-
0242328098
-
Contribution to the calculation of the radiative recombination probability B in intrinsic silicon
-
Wasserrab TH. Contribution to the calculation of the radiative recombination probability B in intrinsic silicon. Zeitschrift für Naturforschung 1978; 3a: 1097-1098.
-
(1978)
Zeitschrift für Naturforschung
, vol.3 A
, pp. 1097-1098
-
-
Wasserrab, T.H.1
-
12
-
-
36149023258
-
Fine structure in the absorption-edge spectrum of Si
-
Macfarlane GG, McLean TP, Quarrington JE, Roberts V. Fine structure in the absorption-edge spectrum of Si. Physical Review 1958; 111(5): 1245-1254.
-
(1958)
Physical Review
, vol.111
, Issue.5
, pp. 1245-1254
-
-
Macfarlane, G.G.1
McLean, T.P.2
Quarrington, J.E.3
Roberts, V.4
-
13
-
-
0001078652
-
Auger coefficients for highly doped and highly excited silicon
-
Dziewior J, Schmid W. Auger coefficients for highly doped and highly excited silicon. Applied Physics Letters 1977; 31(5): 346-348.
-
(1977)
Applied Physics Letters
, vol.31
, Issue.5
, pp. 346-348
-
-
Dziewior, J.1
Schmid, W.2
-
14
-
-
0014609535
-
Radiative recombination in silicon p-n junctions
-
Michaelis W, Pilkuhn MH. Radiative recombination in silicon p-n junctions. Physica Status Solidi 1969; 36(1): 311-319.
-
(1969)
Physica Status Solidi
, vol.36
, Issue.1
, pp. 311-319
-
-
Michaelis, W.1
Pilkuhn, M.H.2
-
15
-
-
0035307668
-
Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide
-
Kerr MJ, Schmidt J, Cuevas A, Bultman JH. Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide. Journal of Applied Physics 2001; 89(7): 3821-3826.
-
(2001)
Journal of Applied Physics
, vol.89
, Issue.7
, pp. 3821-3826
-
-
Kerr, M.J.1
Schmidt, J.2
Cuevas, A.3
Bultman, J.H.4
-
16
-
-
0031385579
-
Rear surface passivation in buried contact solar cells
-
Anaheim
-
Tang YH, Dai XM, Zhao J, Wang A, Wenham SR, Honsberg CB. Rear surface passivation in buried contact solar cells. Proceedings of the 26th IEEE Photovoltaic Specialists Conference, Anaheim, 1997; 251-254.
-
(1997)
Proceedings of the 26th IEEE Photovoltaic Specialists Conference
, pp. 251-254
-
-
Tang, Y.H.1
Dai, X.M.2
Zhao, J.3
Wang, A.4
Wenham, S.R.5
Honsberg, C.B.6
-
17
-
-
0033364929
-
24.5% Efficiency silicon PERT cells on MCZ substrates and 24.7% efficiency PERL cells on FZ substrates
-
Zhao J, Wang A, Green MA. 24.5% Efficiency silicon PERT cells on MCZ substrates and 24.7% efficiency PERL cells on FZ substrates. Progress in Photovoltaics: Research and Application 1999; 7: 471-474.
-
(1999)
Progress in Photovoltaics: Research and Application
, vol.7
, pp. 471-474
-
-
Zhao, J.1
Wang, A.2
Green, M.A.3
|