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Volumn 11, Issue 2, 2003, Pages 97-104

Limiting efficiency of crystalline silicon solar cells due to Coulomb-enhanced Auger recombination

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ENERGY EFFICIENCY; EXCITONS; FERMI LEVEL; LIMITERS;

EID: 0037343076     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/pip.464     Document Type: Article
Times cited : (145)

References (17)
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  • 3
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    • Enhancement of band-to-band Auger recombination by electron-hole correlations
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    • Hangleiter, A.1    Hacker, R.2
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    • Intrinsic upper limits of the carrier lifetime in silicon
    • Hacker R, Hangleiter A. Intrinsic upper limits of the carrier lifetime in silicon. Journal of Applied Physics 1994; 75(11): 7570-7572.
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    • Hacker, R.1    Hangleiter, A.2
  • 5
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    • Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon
    • Altermatt PP, Schmidt J, Heiser G, Aberle AG. Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon. Journal of Applied Physics 1997; 82(10): 4938-4944.
    • (1997) Journal of Applied Physics , vol.82 , Issue.10 , pp. 4938-4944
    • Altermatt, P.P.1    Schmidt, J.2    Heiser, G.3    Aberle, A.G.4
  • 8
    • 0032640794 scopus 로고    scopus 로고
    • Limiting efficiency of bulk and thin-film silicon solar cells in the presence of surface recombination
    • Green MA. Limiting efficiency of bulk and thin-film silicon solar cells in the presence of surface recombination. Progress in Photovoltaics: Research and Applications 1999; 7: 327-330.
    • (1999) Progress in Photovoltaics: Research and Applications , vol.7 , pp. 327-330
    • Green, M.A.1
  • 9
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    • General parameterization of Auger recombination in crystalline silicon
    • Kerr MJ, Cuevas A, General parameterization of Auger recombination in crystalline silicon. Journal of Applied Physics 2002; 91(4): 2473-2480.
    • (2002) Journal of Applied Physics , vol.91 , Issue.4 , pp. 2473-2480
    • Kerr, M.J.1    Cuevas, A.2
  • 10
    • 0015974264 scopus 로고
    • Temperature dependance of the radiative recombination coefficient in silicon
    • Schlangenotto H, Maeder H, Gerlach W. Temperature dependance of the radiative recombination coefficient in silicon. Physica Status Solidi A 1974; 21: 357-367.
    • (1974) Physica Status Solidi A , vol.21 , pp. 357-367
    • Schlangenotto, H.1    Maeder, H.2    Gerlach, W.3
  • 11
    • 0242328098 scopus 로고
    • Contribution to the calculation of the radiative recombination probability B in intrinsic silicon
    • Wasserrab TH. Contribution to the calculation of the radiative recombination probability B in intrinsic silicon. Zeitschrift für Naturforschung 1978; 3a: 1097-1098.
    • (1978) Zeitschrift für Naturforschung , vol.3 A , pp. 1097-1098
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  • 13
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    • Auger coefficients for highly doped and highly excited silicon
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  • 14
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    • Radiative recombination in silicon p-n junctions
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    • (1969) Physica Status Solidi , vol.36 , Issue.1 , pp. 311-319
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  • 15
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    • Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide
    • Kerr MJ, Schmidt J, Cuevas A, Bultman JH. Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide. Journal of Applied Physics 2001; 89(7): 3821-3826.
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    • Zhao, J.1    Wang, A.2    Green, M.A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.