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Volumn 112, Issue 2, 2012, Pages

The role of shallow traps in dynamic characterization of organic semiconductor devices

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE MOBILITIES; CHARGE TRAP; CURRENT VOLTAGE CURVE; DARK INJECTION; DYNAMIC BEHAVIORS; DYNAMIC CHARACTERIZATION; EXPERIMENTAL OBSERVATION; IMPEDANCE SPECTROSCOPY; MEASUREMENT CONDITIONS; RELAXATION EFFECT; SHALLOW TRAPS; TRANSIENT CURRENT; TRANSIENT STATE; TRAP STATE; TWO-REGIME;

EID: 84865463626     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4739303     Document Type: Article
Times cited : (35)

References (31)
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    • D. Dascalu, Solid-State Electron. 11, 491 (1968). 10.1016/0038-1101(68) 90032-4
    • (1968) Solid-State Electron. , vol.11 , pp. 491
    • Dascalu, D.1
  • 28
    • 33646647917 scopus 로고
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    • D. Dascalu, Int. J. Electron. 21, 183 (1966). 10.1080/00207216608937906
    • (1966) Int. J. Electron. , vol.21 , pp. 183
    • Dascalu, D.1
  • 29
    • 0016486737 scopus 로고
    • 10.1002/pssa.2210280110
    • R. Kassing, Phys. Status Solidi A 28, 107 (1975). 10.1002/pssa.2210280110
    • (1975) Phys. Status Solidi A , vol.28 , pp. 107
    • Kassing, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.