Numerical simulation of charge transport in disordered organic semiconductor devices

Journal of Applied Physics

Volumn 108, Issue 5, 2010, Pages

  Knapp, E ^a   Hausermann R ^a   Schwarzenbach, H U ^a   Ruhstaller, B ^a,b  

^a ZURICH UNIVERSITY OF APPLIED SCIENCES   (Switzerland)

^b FLUXIM AG   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

APPROPRIATE MODELS; CHARGE TRANSPORT; COUPLED EQUATION; DENSITY-DEPENDENT; DIRECT SOLUTION; DRIFT DIFFUSION; FIELD-DEPENDENT MOBILITY; FITTING ALGORITHMS; GAUSSIAN DISORDER; HOPPING TRANSPORT; NUMERICAL SIMULATION; ORGANIC LIGHT-EMITTING DEVICES; ORGANIC SEMICONDUCTOR; ORGANIC SEMICONDUCTOR DEVICES; PHYSICAL TRANSPORT; SOLUTION PROCEDURE;

MODELS; NONLINEAR EQUATIONS; NUMERICAL METHODS; PARAMETER EXTRACTION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 77956842577     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3475505     Document Type: Article

References (30)

1. C. Tang and S. VanSlyke, Appl. Phys. Lett. APPLAB 0003-6951 51, 913 (1987). 10.1063/1.98799
2. J. H. Burroughes, D. D. C. Bradley, A. R. Brown, R. N. Marks, K. Mackay, R. H. Friend, P. L. Burn, and A. B. Holmes, Nature (London) NATUAS 0028-0836 347, 539 (1990). 10.1038/347539a0
3. J. C. Scott and G. G. Malliaras, Chem. Phys. Lett. CHPLBC 0009-2614 299, 115 (1999). 10.1016/S0009-2614(98)01277-9
4. B. K. Crone, P. S. Davids, I. H. Campbell, and D. L. Smith, J. Appl. Phys. JAPIAU 0021-8979 87, 1974 (2000). 10.1063/1.372123
5. P. W. M. Blom, M. J. M. de Jong, and J. J. M. Vleggaar, Appl. Phys. Lett. APPLAB 0003-6951 68, 3308 (1996). 10.1063/1.116583 (Pubitemid 126684285)
6. H. Bässler, Phys. Status Solidi B PSSBBD 0370-1972 175, 15 (1993). 10.1002/pssb.2221750102
7. H. Houili, E. Tutis, H. Lütjens, M. N. Bussac, and L. Zuppiroli, Comput. Phys. Commun. CPHCBZ 0010-4655 156, 108 (2003). 10.1016/S0010-4655(03) 00435-1
8. R. Coehoorn and S. L. M. van Mensfoort, Phys. Rev. B PLRBAQ 0556-2805 80, 085302 (2009). 10.1103/PhysRevB.80.085302
9. S. L. M. van Mensfoort and R. Coehoorn, Phys. Rev. B PLRBAQ 0556-2805 78, 085207 (2008). 10.1103/PhysRevB.78.085207
10. B. Ruhstaller, S. A. Carter, S. Barth, H. Riel, W. Riess, and J. C. Scott, J. Appl. Phys. JAPIAU 0021-8979 89, 4575 (2001). 10.1063/1.1352027
11. B. Ruhstaller, T. Beierlein, H. Riel, S. Karg, J. C. Scott, and W. Riess, IEEE J. Sel. Top. Quantum Electron. IJSQEN 1077-260X 9, 723 (2003). 10.1109/JSTQE.2003.818852
12. J. Staudigel, M. StöΒel, F. Steuber, and J. Simmerer, J. Appl. Phys. JAPIAU 0021-8979 86, 3895 (1999). 10.1063/1.371306
13. Semiconducting thin film optics simulator (SETFOS) with transient and steady-state solver by Fluxim AG, URL: www.fluxim.com
14. C. Pflumm and U. Lemmer, Quantum Electron. QUELEZ 1063-7818 44, 790 (2008). 10.1109/JQE.2008.923557
15. J. C. deMello, J. Comput. Phys. JCTPAH 0021-9991 181, 564 (2002). 10.1006/jcph.2002.7142
16. L. J. A. Koster, E. C. P. Smits, V. D. Mihailetchi, and P. W. M. Blom, Phys. Rev. B PLRBAQ 0556-2805 72, 085205 (2005). 10.1103/PhysRevB.72.085205 (Pubitemid 41506479)
17. J. C. Blakesley, H. S. Clubb, and N. C. Greenham, Phys. Rev. B PLRBAQ 0556-2805 81, 045210 (2010). 10.1103/PhysRevB.81.045210
18. J. S. Bonham and D. H. Jarvis, Aust. J. Chem. AJCHAS 0004-9425 30, 705 (1977).
19. J. S. Bonham and D. H. Jarvis, Aust. J. Chem. AJCHAS 0004-9425 31, 2103 (1978).
20. P. Langevin, Ann. Chim. Phys. ACPHAA 0365-1444 VII 28, 433 (1903).
21. W. F. Pasveer, J. Cottaar, C. Tanase, R. Coehoorn, P. A. Bobbert, P. W. M. Blom, D. M. de Leeuw, and M. A. J. Michels, Phys. Rev. Lett. PRLTAO 0031-9007 94, 206601 (2005). 10.1103/PhysRevLett.94.206601 (Pubitemid 41481101)
22. Y. Roichman and N. Tessler, Appl. Phys. Lett. APPLAB 0003-6951 80, 1948 (2002). 10.1063/1.1461419 (Pubitemid 34326249)
23. Y. Preezant and N. Tessler, J. Appl. Phys. JAPIAU 0021-8979 93, 2059 (2003). 10.1063/1.1539534
24. P. Emtage and J. J. O'Dwyer, Phys. Rev. Lett. PRLTAO 0031-9007 16, 356 (1966). 10.1103/PhysRevLett.16.356
25. D. L. Scharfetter and H. K. Gummel, IEEE Trans. Electron Devices IETDAI 0018-9383 16, 64 (1969). 10.1109/T-ED.1969.16566
26. J. Rogel-Salazar, D. D. C. Bradley, J. R. Cash, and J. C. deMello, 11, 1636 (2009).
27. H. K. Gummel, IEEE Trans. Electron Devices IETDAI 0018-9383 11, 455 (1964). 10.1109/T-ED.1964.15364
28. S. Selberherr, Analysis and Simulation of Semiconductor Devices (Springer, Vienna, 1984).
29. J. J. M. van der Holst, M. A. Uijttewaal, R. Ramachandhran, R. Coehoorn, P. A. Bobbert, G. A. D. Wijs, and R. A. D. Groot, Phys. Rev. B PLRBAQ 0556-2805 79, 085203 (2009). 10.1103/PhysRevB.79.085203
30. S. L. M. van Mensfoort, J. Billen, S. I. E. Vulto, R. A. J. Janssen, and R. Coehoorn, Phys. Rev. B PLRBAQ 0556-2805 78, 085208 (2008). 10.1103/PhysRevB.78.085208