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Volumn 42, Issue 11-13, 2011, Pages 667-677

Numerical analysis of steady-state and transient charge transport in organic semiconductor devices

Author keywords

Extended Gaussian disorder model; Numerical simulation; Organic light emitting device; Small signal analysis

Indexed keywords

ANALYTICAL SOLUTIONS; CURRENT VOLTAGE; DRIFT DIFFUSION; ELECTRICAL IMPEDANCE MEASUREMENT; EXPERIMENTAL CHARACTERIZATION; FERMI-DIRAC STATISTICS; GAUSSIAN DENSITY OF STATE; GAUSSIAN DISORDER MODELS; GENERALIZED EINSTEIN RELATION; HOPPING PROCESS; MATERIAL PARAMETER EXTRACTION; NUMERICAL MODELS; NUMERICAL SOLUTION; NUMERICAL TECHNIQUES; ORGANIC LIGHT-EMITTING DEVICES; ORGANIC SEMICONDUCTOR DEVICES; PHYSICAL MODEL; SMALL-SIGNAL ANALYSIS; TRANSIENT CHARGES;

EID: 80755135560     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-011-9443-1     Document Type: Conference Paper
Times cited : (33)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.