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Volumn 207, Issue 7, 2010, Pages 1694-1697
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Systematic investigation on the effect of contact resistance on the performance of a-IGZO thin-film transistors with various geometries of electrodes
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Author keywords
A IGZO TFT; Channel width; Contact resistance; Magnetron sputtering; ZrO 2
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Indexed keywords
A-IGZO TFT;
CHANNEL WIDTHS;
DEVICE PERFORMANCE;
ELECTRICAL PROPERTY;
FIELD-EFFECT MOBILITIES;
GATE INSULATOR;
ON-CURRENTS;
RF-MAGNETRON SPUTTERING;
ROOM TEMPERATURE;
SUBTHRESHOLD SWING;
SYSTEMATIC INVESTIGATIONS;
ZRO 2;
CONTACT RESISTANCE;
ELECTRIC PROPERTIES;
MAGNETRON SPUTTERING;
ZIRCONIUM ALLOYS;
THIN FILM TRANSISTORS;
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EID: 77955624103
PISSN: 18626300
EISSN: 18626319
Source Type: Journal
DOI: 10.1002/pssa.200983753 Document Type: Article |
Times cited : (15)
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References (11)
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