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ChemPhysChem

Volumn 13, Issue 12, 2012, Pages 2982-2988

Strongly reduced Si surface recombination by charge injection during etching in diluted HF/HNO3

(3) Greil, Stefanie M a Schöpke, Andreas a Rappich, Jörg a

a HAHN MEITNER INSTITUT (Germany)

Author keywords

acids; autocatalysis; etching; photoluminescence; silicon

Indexed keywords

ACIDS; CHARGE CARRIERS; HYDROFLUORIC ACID; PHOTOLUMINESCENCE; POTASSIUM HYDROXIDE; SILICON;

AUTOCATALYSIS; BACK SURFACE FIELDS; NEAR SURFACE REGIONS; PHOTOLUMINESCENCE INTENSITIES; PHOTOLUMINESCENCE MEASUREMENTS; POSITIVE SURFACE CHARGE; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS;

ETCHING;

EID: 84865228355 PISSN: 14394235 EISSN: 14397641 Source Type: Journal
DOI: 10.1002/cphc.201200269 Document Type: Article

Times cited : (9)

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