Physics and statistics of non-ohmic shunt conduction and metastability in amorphous silicon p-i-n solar cells

IEEE Journal of Photovoltaics

Volumn 1, Issue 2, 2011, Pages 111-117

  Dongaonkar, Sourabh ^a   Karthik, Y ^b   Mahapatra, Souvik ^b   Alam, Muhammad A ^a  

^a PURDUE UNIVERSITY   (United States)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Amorphous silicon; photovoltaic (PV) cells; shunt; thin films

Indexed keywords

A-SI:H; AMORPHOUS SILICON (A-SI:H); ELECTRICAL CHARACTERISTIC; EXPERIMENTAL OBSERVATION; METAL INCORPORATION; METASTABILITIES; NON-VOLATILE; P-TYPE; PHOTOVOLTAIC; PHYSICAL MODEL; ROBUST MEASUREMENT; SHUNT; SHUNT CURRENT; SPACE-CHARGE-LIMITED;

AMORPHOUS SILICON; SILICON; SOLAR CELLS; THIN FILMS;

COMPUTER SIMULATION;

EID: 84865172690     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2011.2174030     Document Type: Article

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